Tensile Stress Measurement Device with Attachment Plates and Related Methods

ABSTRACT

A tensile stress measurement device is to be attached to an object to be measured. The tensile stress measurement device may include an IC having a semiconductor substrate and tensile stress detection circuitry, the semiconductor substrate having opposing first and second attachment areas. The tensile stress measurement device may include a first attachment plate coupled to the first attachment area and extending outwardly to be attached to the object to be measured, and a second attachment plate coupled to the second attachment area and extending outwardly to be attached to the object to be measured. The tensile stress detection circuitry may be configured to detect a tensile stress imparted on the first and second attachment plates when attached to the object to be measured.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No. 14/610,068filed on Jan. 30, 2015, which application is hereby incorporated hereinby reference.

TECHNICAL FIELD

The present disclosure relates to the field of electronic devices, and,more particularly, to integrated circuits and related methods.

BACKGROUND

In solid structures, particularly in load-bearing structures of, forexample, bridges, buildings, tunnels, railways, containment walls, dams,embankments, pipelines and underground structures of metropolitantransport lines, and so on, it is important to monitor, in many points,significant parameters, like, for example, pressure, temperature andmechanical stresses. Such monitoring is carried out periodically orcontinuously, and is useful both at the initial stage and during thelifetime of the structure.

For this purpose, an approach in this field includes the application ofelectronic monitoring devices based on electronic sensors, capable ofproviding good performance at low cost. Usually, such devices areapplied onto the surface of the structures to be monitored, or insiderecesses already in the structure and accessible from the outside.

Such devices are not able to exhaustively detect the parameters withinthe structure to be monitored, which it may be useful to know toevaluate the quality of the structure, its safety, its ageing, itsreaction to variable atmospheric conditions, and so on. Moreover, suchdevices can only typically be applied after the structure has beenbuilt, and not while it is being built. Therefore, they may be unable toevaluate possible initial or internal defects.

An approach to these requirements is disclosed in U.S. Pat. No.6,950,767 to Yamashita et al., which provides an electronic monitoringdevice entirely contained, i.e. “buried”, within the material (forexample, reinforced concrete) from which the structure to be monitoredis made. More specifically, the device buried in the structure is anentire system encapsulated in a single package, made up of differentparts, assembled on a substrate, such as integrated circuits, sensors,antenna, capacitors, batteries, memories, control units, and yet more,made in different chips connected together through electricalconnections made with metallic connections.

The system of U.S. Pat. No. 6,950,767 to Yamashita et al. also comprisessub-systems having functions correlated with the power supply, forexample, rectifiers in the case in which it receives energy from theoutside, through electromagnetic waves, or else its own battery forgenerating the power supply internally. It may be observed that amonitoring system intended to be “embedded” initially in a buildingmaterial (for example, liquid concrete, which will then solidify) and tothen remain “buried” in the solid structure, is subjected to criticalconditions, for example, extremely high pressures, which can even be afew hundreds of atmospheres. There are also numerous other causes ofwearing, over time, due, for example, to water infiltration, capable ofdamaging the system.

A potential drawback to systems, such as that disclosed in U.S. Pat. No.6,950,767 to Yamashita et al., derives from the fact that they arecomplex systems, even though they are enclosed in a package, and cantherefore be damaged when facing the operating conditions in which theywork. In particular, the electrical interconnections between the variousparts of the package can be vulnerable. Generally, electricalinterconnections inside a harsh environment, such as a concretestructure, are not reliable and have a short lifetime, for example, dueto mechanical stress and corrosion.

Moreover, a “window” is provided in the package to allow the sensor todetect an associated parameter can be a weak point for possibleinfiltration of humidity. Furthermore, a crack or imperfection in thecoating material can allow water and chemical substances to penetrateinside the package and cause short-circuits. In addition to water, othersubstances, such as potentially corrosive acids, can also infiltrate. Ingeneral, although designed for the mentioned use, the reliability ofsystems like that of U.S. Pat. No. 6,950,767 to Yamashita et al. has alimitation due to the complexity of the structure of such systems,although miniaturized. A possible approach is to create an electronicsystem fully embedded in an integrated circuit without electricalinterconnections, but it may need an efficient way to supply power to ICby electromagnetic waves, reducing power loss due to semiconductormaterial conductivity.

SUMMARY

Generally speaking, a tensile stress measurement device is to beattached to an object to be measured. The tensile stress measurementdevice may include at least one integrated circuit (IC) comprising asemiconductor substrate and tensile stress detection circuitry thereon,the semiconductor substrate having opposing first and second attachmentareas. The tensile stress measurement device may include a firstattachment plate coupled to the first attachment area and extendingoutwardly therefrom to be attached to the object to be measured, and asecond attachment plate coupled to the second attachment area andextending outwardly therefrom to be attached to the object to bemeasured. The tensile stress detection circuitry may be configured todetect a tensile stress imparted on the first and second attachmentplates when attached to the object to be measured.

In some embodiments, the at least one IC comprises a plurality ofelectrically conductive vias extending through the semiconductorsubstrate at the first and second attachment areas thereof and beingcoupled to the first and second attachment plates. Also, the tensilestress measurement device may include first and second elastic membersextending between the first and second attachment plates. The tensilestress measurement device may also include encapsulation materialsurrounding the at least one IC and the first and second attachmentplates.

In other embodiments, the first and second attachment plates and theopposing first and second attachment areas may each compriseinterlocking features configured to define an interference couplingtherebetween. In yet another embodiment, the tensile stress measurementdevice further comprises a first bonding layer carried by thesemiconductor substrate at the opposing first and second attachmentareas thereof, and a second bonding layer different from the firstbonding layer, carried by the first and second attachment plates, andbeing bonded with the first bonding layer.

Moreover, the at least one IC may comprise first and second ICs. Thefirst and second attachment plates may each have a plurality of openingstherein. The tensile stress measurement device may include at least oneantenna trace carried by at least one of the first and second attachmentplates and being coupled to the tensile stress detection circuitry.

Another aspect is directed to a method of making a tensile stressmeasurement device to be attached to an object to be measured. Themethod may include forming at least one IC comprising a semiconductorsubstrate and tensile stress detection circuitry thereon, thesemiconductor substrate having opposing first and second attachmentareas. The method may further comprise coupling a first attachment plateto the first attachment area and to extend outwardly therefrom to beattached to the object to be measured, and coupling a second attachmentplate to the second attachment area and to extend outwardly therefrom tobe attached to the object to be measured. The tensile stress detectioncircuitry is to detect a tensile stress imparted on the first and secondattachment plates when attached to the object to be measured.

Another aspect is directed to a tensile stress measurement device to beattached to an object to be measured. The tensile stress measurementdevice may include at least one IC comprising a semiconductor substrateand tensile stress detection circuitry on a detection portion of thesemiconductor substrate. The semiconductor substrate may include a firstattachment plate portion extending outwardly from the detection portionand to be attached to the object to be measured, and a second attachmentplate portion extending outwardly from the detection portion and to beattached to the object to be measured. The tensile stress detectioncircuitry may be configured to detect a tensile stress imparted on thefirst and second attachment plate portions when attached to the objectto be measured.

Another aspect is directed to a method for making a tensile stressmeasurement device to be attached to an object to be measured. Themethod may include forming at least one IC comprising a semiconductorsubstrate and tensile stress detection circuitry on a detection portionof the semiconductor substrate. The semiconductor substrate may comprisea first attachment plate portion extending outwardly from the detectionportion and to be attached to the object to be measured, and a secondattachment plate portion extending outwardly from the detection portionand to be attached to the object to be measured. The tensile stressdetection circuitry may detect a tensile stress imparted on the firstand second attachment plate portions when attached to the object to bemeasured.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a top plan view of a tensile stressmeasurement device, according to the present disclosure.

FIG. 2 is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

FIG. 3A is a schematic diagram of a cross-section view of anotherembodiment of the tensile stress measurement device along line 3-3,according to the present disclosure.

FIG. 3B is a schematic diagram of a top plan view of the tensile stressmeasurement device of FIG. 3A.

FIG. 4A is a schematic diagram of a cross-section view of anotherembodiment of the tensile stress measurement device along line 4-4,according to the present disclosure.

FIG. 4B is a schematic diagram of a top plan view of the tensile stressmeasurement device of FIG. 4A.

FIG. 5 is a schematic diagram of a cross-section view of anotherembodiment of the tensile stress measurement device, according to thepresent disclosure.

FIG. 6A is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

FIG. 6B is a schematic diagram of a cross-section view of the tensilestress measurement device of FIG. 6A along line 6-6 duringmanufacturing.

FIG. 6C is a schematic diagram of a cross-section view of the tensilestress measurement device of FIG. 6A along line 6-6.

FIG. 7A is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

FIG. 7B is a schematic diagram of a cross-section view of the tensilestress measurement device of FIG. 7A along line 7-7.

FIG. 8 is a schematic diagram of a cross-section view of anotherembodiment of the tensile stress measurement device, according to thepresent disclosure.

FIG. 9 is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

FIG. 10A is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

FIG. 10B is a schematic diagram of a cross-section view of the tensilestress measurement device of FIG. 10A along line 10-10.

FIGS. 11A-11H and 12-13 are schematic diagrams of a top plan view ofother embodiments of the tensile stress measurement device, according tothe present disclosure.

FIG. 14A is a schematic diagram of a cross-section view of anotherembodiment of the tensile stress measurement device along line 14 a-14a, according to the present disclosure.

FIG. 14B is a schematic diagram of a cross-section view of the tensilestress measurement device of FIG. 14A along line 14 b-14 b.

FIG. 15 is a schematic diagram of a cross-section view of anotherembodiment of the tensile stress measurement device, according to thepresent disclosure.

FIG. 16 is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

FIG. 17A is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

FIG. 17B is a schematic diagram of a cross-section view of the tensilestress measurement device of FIG. 17A along line 17-17.

FIG. 18A is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

FIG. 18B is a schematic diagram of a cross-section view of the tensilestress measurement device of FIG. 18A along line 18-18.

FIG. 19 is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

FIG. 20 is a schematic diagram of a top plan view of another embodimentof the tensile stress measurement device, according to the presentdisclosure.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The present disclosure will now be described more fully hereinafter withreference to the accompanying drawings, in which several embodiments ofthe invention are shown. This present disclosure may, however, beembodied in many different forms and should not be construed as limitedto the embodiments set forth herein. Rather, these embodiments areprovided so that this disclosure will be thorough and complete, and willfully convey the scope of the present disclosure to those skilled in theart. Like numbers refer to like elements throughout, and base 100reference numerals are used to indicate similar elements in alternativeembodiments.

Referring initially to FIG. 1, a tensile stress measurement device 30according to the present disclosure is now described. The tensile stressmeasurement device 30 is to be attached to an object (e.g. embedded in amass of material, such as concrete, or attached to a support structure,such as a beam) to be measured.

The tensile stress measurement device 30 illustratively includes an IC31 comprising a semiconductor substrate (e.g. silicon) 32, and tensilestress detection circuitry (e.g. piezo-resistivity or piezoelectric,such as using lead zirconium titanate, based circuitry) 33 thereon. Thesemiconductor substrate 32 includes opposing first and second attachmentareas 34, 35. The tensile stress measurement device 30 illustrativelyincludes a first attachment plate 36 coupled to the first attachmentarea 34 and extending outwardly therefrom to be attached to the objectto be measured, and a first mechanical coupling 38 (e.g. vias, bondinglayers, interlocking features etc.) attaching the first attachment plate36 to the first attachment area 34.

The tensile stress measurement device 30 illustratively includes asecond attachment plate 37 coupled to the second attachment area 35 andextending outwardly therefrom to be attached to the object to bemeasured, and a second mechanical coupling 39 (e.g. vias, bondinglayers, interlocking features etc.) attaching the second attachmentplate 37 to the second attachment area 35. In this embodiment, the firstand second attachment plates 36, 37 are planar and parallel with themajor surfaces of the IC 31, but in other embodiments, the first andsecond attachment plates may be non-planar.

The tensile stress detection circuitry 33 is configured to detect atensile stress imparted on the first and second attachment plates 36, 37when attached to the object to be measured. Advantageously, the firstand second attachment plates 36, 37 provide a greater surface area forimparting tensile stress from the object, and they may allow formeasuring tensile stress in a specific direction.

Another aspect is directed to a method of making a tensile stressmeasurement device 30 to be attached to an object to be measured. Themethod may include forming at least one IC 31 comprising a semiconductorsubstrate 32 and tensile stress detection circuitry 33 thereon, thesemiconductor substrate having opposing first and second attachmentareas 34, 35. The method may further comprise coupling a firstattachment plate 36 to the first attachment area 34 and to extendoutwardly therefrom to be attached to the object to be measured, andcoupling a second attachment plate 37 to the second attachment area 35and to extend outwardly therefrom to be attached to the object to bemeasured. The tensile stress detection circuitry 33 is to detect atensile stress imparted on the first and second attachment plates 36, 37when attached to the object to be measured.

Referring now additionally to FIG. 2, another embodiment of the tensilestress measurement device 130 is now described. In this embodiment ofthe tensile stress measurement device 130, those elements alreadydiscussed above with respect to FIG. 1 are incremented by 100 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that this tensile stress measurement device 130illustratively includes first and second elastic members 161, 162extending between the first and second attachment plates. In thisembodiment, the first and second elastic members 161, 162 comprisesprings, for example. Advantageously, the first and second elasticmembers 161, 162 improve the mechanical strength of the tensile stressmeasurement device 130, and they may modify the maximum value of tensilestress that can be measured, i.e. increasing it.

Referring now additionally to FIGS. 3A and 3B, another embodiment of thetensile stress measurement device 230 is now described. In thisembodiment of the tensile stress measurement device 230, those elementsalready discussed above with respect to FIG. 1 are incremented by 200and most require no further discussion herein. This embodiment differsfrom the previous embodiment in that this tensile stress measurementdevice 230 illustratively includes the IC 231 comprising a plurality ofelectrically conductive vias 238 a-238 c, 239 a-239 c extending throughthe semiconductor substrate 232 at the first and second attachment areas234, 235 thereof and being coupled to the first and second attachmentplates 236, 237, for example, via a soldering material, and a pluralityof metal layers 280 in a dielectric material.

In this embodiment, the first and second attachment plates 236, 237comprise a metallic material, and there may be an additional metallicbonding layer (not shown) between the first and second attachment platesand the plurality of electrically conductive vias 238 a-238 c, 239 a-239c. Advantageously, the tensile stress measurement device 23 o may bereadily welded/soldered/embedded onto structural support elements (e.g.beams, tubes, rails) via the first and second attachment plates 236,237.

Referring now additionally to FIGS. 4A and 4B, another embodiment of thetensile stress measurement device 330 is now described. In thisembodiment of the tensile stress measurement device 330, those elementsalready discussed above with respect to FIG. 1 are incremented by 300and most require no further discussion herein. This embodiment differsfrom the previous embodiment in that this tensile stress measurementdevice 330 illustratively includes the IC 331 comprising a plurality ofelectrically conductive vias 338 a-338 c, 339 a-339 c extending throughthe semiconductor substrate 332 at the first and second attachment areas334, 335 thereof and being coupled to the first and second attachmentplates 336, 337. The tensile stress measurement device 330illustratively includes encapsulation material 342 surrounding the IC331 and the first and second attachment plates 336, 337, therebyproviding further elastic strength and protecting the IC. Theencapsulation material 342 may have the same function of the first andsecond elastic members 161, 162 (FIG. 2), i.e. modifying the maximumvalue of tensile stress that can be measured.

In some embodiments (not shown), the tensile stress measurement device330 may include an external system coupled to the first and secondattachment plates 336, 337 for communicating with the IC 331. In theseembodiments, the IC 331 would transmit the detected tensile stress valuevia a wired interface, such as a power-line modem. In this embodiment,the first and second attachment plates 336, 337 have both a mechanicalpurpose and an electrical communication purpose. The connections betweenthe IC 331 and the first and second attachment plates 336, 337 areelectrically isolated, for example, using a dielectric material.

Referring now additionally to FIG. 5, another embodiment of the tensilestress measurement device 430 is now described. In this embodiment ofthe tensile stress measurement device 430, those elements alreadydiscussed above with respect to FIG. 1 are incremented by 400 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that this tensile stress measurement device 430illustratively includes the first and second attachment plates 436, 437and the opposing first and second attachment areas 434, 435 eachcomprising interlocking features 438, 439, 443, 444 configured to definean interference coupling therebetween. Interlocking features 438, 439,443, 444 may be created using a mashing process followed by an etching(for example, a Reactive-Ion Etching (RIE) process or by laser drillingprocess.

In particular, the interlocking features illustratively includeprotrusions 438, 439 extending perpendicularly respectively from thefirst and second attachment plates 436, 437, and openings 443, 444defined in the IC 431. During manufacture, the first and secondattachment plates 436, 437 are positioned so that the protrusions 438,439 extend through the openings 443, 444, and the encapsulation material442 is formed to fill the crevices defined between the protrusions andthe openings in the IC 431. In some embodiments, the protrusions 438,439 may include a plurality of pillars, or a contiguous wall extendingbetween sides of the first and second attachment plates 436, 437.

Referring now additionally to FIGS. 6A-6C, another embodiment of thetensile stress measurement device 530 is now described. In thisembodiment of the tensile stress measurement device 530, those elementsalready discussed above with respect to FIGS. 1 and 5 are incremented by500 and most require no further discussion herein. This embodimentdiffers from the previous embodiment in that this tensile stressmeasurement device 530 illustratively includes the first and secondattachment plates 536, 537 and the opposing first and second attachmentareas 534, 535 each comprising laterally extending interlocking features538 a-538 b, 539 a-539 b configured to define an interference couplingtherebetween. In particular, the laterally extending interlockingfeatures illustratively include interlocking L-shaped key features inthe first and second attachment areas 534, 535, and respectively thefirst and second attachment plates 536, 537.

Referring now additionally to FIGS. 7A and 7B, another embodiment of thetensile stress measurement device 630 is now described. In thisembodiment of the tensile stress measurement device 630, those elementsalready discussed above with respect to FIG. 1 are incremented by 600and most require no further discussion herein. This embodiment differsfrom the previous embodiment in that this tensile stress measurementdevice 630 illustratively includes a first bonding layer 638 a, 639 acarried by the semiconductor substrate 632 at the opposing first andsecond attachment areas 634, 635 thereof, and a second bonding layer 638b, 639 b different from the first bonding layer carried by the first andsecond attachment plates 636, 637 and being bonded with the firstbonding layer. The first bonding layer 638 a, 639 a and second bondinglayer 638 b, 639 b may each comprise metallic bonding layers, such assolder, or an adhesive based bonding layer. Also, in another embodiment,the first bonding layer 638 a, 639 a and eventually the second bondinglayer 638 b, 639 b may each extend along an entire length of thesemiconductor substrate 632.

Referring now additionally to FIG. 8, another embodiment of the tensilestress measurement device 730 is now described. In this embodiment ofthe tensile stress measurement device 730, those elements alreadydiscussed above with respect to FIGS. 1 and 7A-7B are incremented by 700and most require no further discussion herein. This embodiment differsfrom the previous embodiments in that this tensile stress measurementdevice 730 illustratively includes first and second ICs 731 a-731 bcoupled to opposing major surfaces of the first and second attachmentplates 736-737. The tensile stress measurement device 730 illustrativelyincludes first and second pluralities of bonding layers 638 aa-639 bbcoupling the first and second ICs 731 a-731 b to the first and secondattachment plates 736-737. Advantageously, the first and second ICs 731a-731 b create a symmetric structure that may improve mechanicalrobustness, provide redundancy, which may improve reliability andlifetime of the tensile stress measurement device 730. In someembodiments (not shown), the first or a second ICs 731 a-731 b of thetensile stress measurement device 730 may be replaced with a dummysubstrate (e.g. silicon).

Referring now additionally to FIG. 9, another embodiment of the tensilestress measurement device 830 is now described. In this embodiment ofthe tensile stress measurement device 830, those elements alreadydiscussed above with respect to FIGS. 1 and 2 are incremented by 800 andmost require no further discussion herein. This embodiment differs fromthe previous embodiment in that this tensile stress measurement device830 illustratively includes curved structural elements 845, 846extending between the first and second attachment plates 836, 837.Elements 845, 846, 836 and 837 may create a structure that is like aring/loop, that may improve mechanical robustness, for example,reducing/eliminating the bending, but in other embodiments (not shown),a more complex mechanical structure than a ring may be created. Elements845 and 846 may have the same function of the first and second elasticmembers 161, 162 (FIG. 2) modifying the maximum value of tensile stressthat can be measured. In some embodiments, the curved structuralelements 845, 846 may be integral with the first and second attachmentplates 836, 837, but in other embodiments, the curved structuralelements 845, 846 may comprise separate elastic material (such as amalleable metallic material) portions.

Referring now additionally to FIGS. 10A and 10B, another embodiment ofthe tensile stress measurement device 930 is now described. In thisembodiment of the tensile stress measurement device 930, those elementsalready discussed above with respect to FIGS. 1 and 7A-7B areincremented by 900 and most require no further discussion herein. Thisembodiment differs from the previous embodiment in that this tensilestress measurement device 930 illustratively includes bonding layers938, 939 carried by the semiconductor substrate 932 at the first andsecond attachment areas 934, 935. The bonding layers 938, 939 maycomprise adhesive material, for example.

The tensile stress measurement device 930 illustratively includes acircuit board layer 947 carried by the second attachment plate 937, aplurality of bond pads 949 a-949 c carried by the semiconductorsubstrate 932, and a plurality of bond wires 948 a-948 c. The circuitboard layer 947 illustratively includes a plurality of electricallyconductive connectors 950 a-950 c carried thereby for connection toexternal circuitry. The plurality of bond wires 948 a-948 c respectivelycouple the plurality of bond pads 949 a-949 c to the plurality ofelectrically conductive connectors 950 a-950 c.

Referring now additionally to FIGS. 11A and 11H, eight differentembodiments of the tensile stress measurement device 1030, 1130, 1230,1330, 1430, 1530, 1630, & 1730 are now described. In these embodimentsof the tensile stress measurement device 1030, 1130, 1230, 1330, 1430,1530, 1630, & 1730, those elements already discussed above with respectto FIG. 1 are incremented respectively by 1000, 1100, 1200, 1300, 1400,1500, 1600, & 1700 and most require no further discussion herein. Theseembodiments differ from the previous embodiment in that this tensilestress measurement device 1030, 1130, 1230, 1330, 1430, 1530, 1630, &1730 illustratively includes varying shapes. These shapes may be createdusing a mashing process followed by an etching (for example, RIE)process or by laser drilling process.

Referring now additionally to FIG. 12, another embodiment of the tensilestress measurement device 1830 is now described. In this embodiment ofthe tensile stress measurement device 1830, those elements alreadydiscussed above with respect to FIG. 1 are incremented by 1800 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that this tensile stress measurement device 1830illustratively includes the first and second attachment plates 1836,1837 integrated in the semiconductor substrate 1832 of the IC 1831. Or,in other words, the semiconductor substrate 1832 illustratively includesopposing ends that respectively define the first and second attachmentplates 1836, 1837.

The tensile stress measurement device 1830 illustratively includeselectrically conductive antenna traces 1852 surrounding and connected tothe IC 1831 and carried by the semiconductor substrate 1832. As will beappreciated, the electrically conductive antenna traces 1852 (i.e. anear field antenna) are coupled to the tensile stress detectioncircuitry 1833 for providing a radio frequency (RF) wireless interfacefor powering the IC 1831 and transmitting the tensile stress value, forexample, when physically inaccessible inside a concrete structure. Itshould be appreciated that the shape of the semiconductor substrate 1832in FIG. 12 is exemplary, and can take any of the shapes depicted inFIGS. 11A-11H.

In other words, the tensile stress measurement device 1830 includes anIC 1831 comprising a semiconductor substrate 1832 and tensile stressdetection circuitry 1833 on a detection portion of the semiconductorsubstrate. The semiconductor substrate 1832 may include a firstattachment plate portion 1836 extending outwardly from the detectionportion and to be attached to the object to be measured, and a secondattachment plate portion 1837 extending outwardly from the detectionportion and to be attached to the object to be measured. The tensilestress detection circuitry 1833 may be configured to detect a tensilestress imparted on the first and second attachment plate portions 1836,1837 when attached to the object to be measured.

Another aspect is directed to a method for making a tensile stressmeasurement device 1830 to be attached to an object to be measured. Themethod may include forming at least one IC 1831 comprising asemiconductor substrate 1832 and tensile stress detection circuitry 1833on a detection portion of the semiconductor substrate. The semiconductorsubstrate 1832 may comprise a first attachment plate portion 1836extending outwardly from the detection portion and to be attached to theobject to be measured, and a second attachment plate portion 1837extending outwardly from the detection portion and to be attached to theobject to be measured. The tensile stress detection circuitry 1833 maydetect a tensile stress imparted on the first and second attachmentplate portions 1836, 1837 when attached to the object to be measured.

Referring now additionally to FIG. 13, another embodiment of the tensilestress measurement device 1930 is now described. In this embodiment ofthe tensile stress measurement device 1930, those elements alreadydiscussed above with respect to FIGS. 1 and 12 are incremented by 1900and most require no further discussion herein. This embodiment differsfrom the previous embodiment in that this tensile stress measurementdevice 1930 illustratively includes first and second tensile stressdetection circuitries 1933 a-1933 b, and electrically conductive antennatraces (i.e. a far field antenna) 1951, 1952 respectively carried by thefirst and second attachment plates 1936, 1937 of the semiconductorsubstrate 1932 and coupled to the first and second tensile stressdetection circuitries. It should be appreciated that the shape of thesemiconductor substrate 1932 in FIG. 13 is exemplary, and can take anyof the shapes depicted in FIGS. 11A-11H.

Referring now additionally to FIGS. 14A and 14B, another embodiment ofthe tensile stress measurement device 2030 is now described. In thisembodiment of the tensile stress measurement device 2030, those elementsalready discussed above with respect to FIG. 1 are incremented by 2000and most require no further discussion herein. This embodiment differsfrom the previous embodiment in that this tensile stress measurementdevice 2030 illustratively includes the first and second attachmentplates 2036, 2037 comprising encapsulation material 2042, and eventuallya protective layer 2053 surrounding the IC 2031. Of course, in thisembodiment, the encapsulation material must comprise a sufficientinelasticity value.

Here, in this embodiment, the first and second attachment plates 2036,2037 each has a C-shaped cross-section, as perhaps best shown in FIG.14B, and they partially surround the peripheral sides of the IC 2031.Also, as shown in FIG. 14A, the first and second attachment plates 2036,2037 define C-shapes over the IC 2031.

In some embodiments, the first and second attachment plate 2036, 2037may each have a plurality of openings therein. The tensile stressmeasurement device 2030 may be equipped with mechanical structures offastening (e.g. holes, threaded structures or other mechanicalstructures), for example, created in the encapsulation material 2042,and parts like cables, cords, straps, tie-beams that can be used to joinmechanically the tensile stress measurement device to the structure/bodywhere the tensile stress must be measured. In other embodiments (notshown), the dielectric material 2081 may be removed from attachmentareas 2034, 2035 to have the same adhesion between the encapsulationmaterial 2042 and the surfaces of attachment areas 2034, 2035 ofsemiconductor substrate 2032, or the dielectric material 2081 may bepresent on the top and bottom main surfaces of the IC 2031 to make theadhesion of encapsulation material 2042 uniform. The encapsulationmaterial 2042 and eventually the protective layer 2053 may be, forexample, a molding compound or a micro-granulated building material.

Referring now additionally to FIG. 15, another embodiment of the tensilestress measurement device 2130 is now described. In this embodiment ofthe tensile stress measurement device 2130, those elements alreadydiscussed above with respect to FIG. 1 are incremented by 2100 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that this tensile stress measurement device 2130illustratively includes first and second ICs 2131 a, 2131 b, anadditional antenna layer 2154 between the first and second ICs, and thefirst and second attachment plates 2136, 2137 comprising encapsulationmaterial 2142. The additional antenna layer 2154 illustratively includesa substrate 2056, and additional electrically conductive antenna traces2155 carried thereby. Electrically conductive antenna traces 2155 may becoupled, for example, by a magnetic field, to electrically conductivetraces 2151, 2152 of first and second ICs 2131 a, 2131 b then theadditional antenna layer 2154 is galvanically isolated from the firstand second ICs 2131 a, 2131 b. In other embodiments, the additionalantenna layer 2154 can be carried externally, i.e. by an outer surfaceof the encapsulation material 2142. The additional antenna layer 2154may be coupled to an external system by a cable or a further antennasystem (not shown).

Referring now additionally to FIG. 16, another embodiment of the tensilestress measurement device 2230 is now described. In this embodiment ofthe tensile stress measurement device 2230, those elements alreadydiscussed above with respect to FIG. 1 are incremented by 2200 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that this tensile stress measurement device 223 oillustratively includes the first and second attachment plates 2236,2237 comprising encapsulation material 2242. Also, the first and secondattachment plates 2236, 2237 each illustratively includes a laterallydistal portion having a threaded surface 2257, 2258. The IC 2231 alsoillustratively includes electrically conductive antenna traces 2251carried by the semiconductor substrate 2232.

Referring now additionally to FIGS. 17A-17B, another embodiment of thetensile stress measurement device 2330 is now described. In thisembodiment of the tensile stress measurement device 2330, those elementsalready discussed above with respect to FIG. 1 are incremented by 2300and most require no further discussion herein. This embodiment differsfrom the previous embodiment in that this tensile stress measurementdevice 2330 illustratively includes the first and second attachmentplates 2336, 2337 comprising encapsulation material 2342.

Also, the tensile stress measurement device 2330 illustratively includesa circuit board layer 2347 carried by the encapsulation material 2342, aplurality of bond pads 2349 a-2349 c carried by the semiconductorsubstrate 2332, and a plurality of bond wires 2348 a-2348 c. The circuitboard layer 2347 illustratively includes a plurality of electricallyconductive connectors 2350 a-2350 c carried thereby (e.g. coupled toexternal circuitry). The tensile stress measurement device 233 oillustratively includes a dummy substrate 2359, and a bonding layer 2360coupling the dummy substrate to the semiconductor substrate 2332.Advantageously, the dummy substrate 2359 may improve mechanicalrobustness of the tensile stress measurement device 2330. The dummysubstrate 2359 may be a semiconductor substrate (e.g. silicon) and thenthe encapsulation material 2342 can have the same adhesion to the mainsurfaces of semiconductor substrates 2332, 2359.

Referring now additionally to FIGS. 18A-18B, another embodiment of thetensile stress measurement device 2430 is now described. In thisembodiment of the tensile stress measurement device 2430, those elementsalready discussed above with respect to FIG. 1 are incremented by 2400and most require no further discussion herein. This embodiment differsfrom the previous embodiment in that this tensile stress measurementdevice 2430 illustratively includes the first and second attachmentplates 2436, 2437 comprising encapsulation material 2442. Also, the IC2431 illustratively includes openings therein for receivingencapsulation material 2442 for defining the mechanical couplings 2438,2439 of the first and second attachment plates 2436, 2437.

Referring now additionally to FIG. 19, another embodiment of the tensilestress measurement device 2530 is now described. In this embodiment ofthe tensile stress measurement device 2530, those elements alreadydiscussed above with respect to FIG. 1 are incremented by 2500 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that this tensile stress measurement device 2530illustratively includes the first and second attachment plates 2536,2537 comprising encapsulation material 2542, and the IC 2531illustratively includes first and second dummy substrates 2559 a-2559 bsandwiching the IC. Also, the IC 2531 illustratively includes recesses2538 a-2538 b, 2539 a-2539 b therein for receiving encapsulationmaterial 2542 for defining the mechanical coupling of the first andsecond attachment plates 2536, 2537. Also, the encapsulation materialsurrounds the IC 2531 on all sides. In another embodiment (not shown),the recesses 2538 a-2538 b, 2539 a-2539 b may be created on thesemiconductor substrate 2532 in the attachment areas 2534, 2535, and thefirst and second attachment plates 2536, 2537 may be absent. In otherembodiments, the recesses 2538 a-2538 b, 2539 a-2539 b may be apatterned surface with a plurality of recesses improving the adhesion ofencapsulation material 2542.

Referring now additionally to FIG. 20, another embodiment of the tensilestress measurement device 2630 is now described. In this embodiment ofthe tensile stress measurement device 2630, those elements alreadydiscussed above with respect to FIG. 1 are incremented by 2600 and mostrequire no further discussion herein. This embodiment differs from theprevious embodiment in that this tensile stress measurement device 2630illustratively includes the first and second attachment plates 2636,2637 comprising encapsulation material, and the IC 2631 illustrativelyincludes first and second dummy substrates 2659 a-2659 b sandwiching theIC. Also, the IC 2631 illustratively includes recesses 2638 a-2638 b,2639 a-2639 b therein for receiving encapsulation material for definingthe mechanical coupling of the first and second attachment plates 2636,2637.

Many modifications and other embodiments of the present disclosure willcome to the mind of one skilled in the art having the benefit of theteachings presented in the foregoing descriptions and the associateddrawings. Therefore, it is understood that the present disclosure is notto be limited to the specific embodiments disclosed, and thatmodifications and embodiments are intended to be included within thescope of the appended claims.

What is claimed is:
 1. A method of making a tensile stress measurementdevice, the method comprising: forming an integrated circuit (IC)comprising a semiconductor substrate and tensile stress detectioncircuitry, the semiconductor substrate having opposing first and secondattachment areas; coupling a first attachment plate to the firstattachment area and to extend outwardly therefrom, the first attachmentplate being configured to be attached to an object to be measured; andcoupling a second attachment plate to the second attachment area and toextend outwardly therefrom, the second attachment plate being configuredto be attached to the object to be measured, the tensile stressdetection circuitry being configured to detect a tensile stress impartedon the first and second attachment plates when attached to the object tobe measured, wherein the first attachment plate and the secondattachment plate are not part of a single structure, and wherein thefirst attachment plate is coupled to the second attachment plate throughan elastic material different from a material of the first attachmentplate.
 2. The method of claim 1, further comprising forming a pluralityof electrically conductive vias to extend through the semiconductorsubstrate at the first and second attachment areas and to be coupled tothe first and second attachment plates.
 3. The method of claim 1,further comprising: using a first elastic member to connect the firstattachment plate to the second attachment plate along a first edge ofthe IC; and using a second elastic member to connect the firstattachment plate to the second attachment plate along a second edge ofthe IC, the first edge being opposite to the second edge.
 4. The methodof claim 1, further comprising forming an encapsulation material tosurround the IC and the first and second attachment plates.
 5. Themethod of claim 1, wherein the first and second attachment plates andthe opposing first and second attachment areas each comprisesinterlocking features to define an interference coupling therebetween.6. The method of claim 1, further comprising: forming a first bondinglayer on the semiconductor substrate at the opposing first and secondattachment areas; and forming a second bonding layer different from thefirst bonding layer and on the first and second attachment plates and tobe bonded with the first bonding layer.
 7. The method of claim 1,further comprising providing a second IC comprising a secondsemiconductor substrate with a second tensile stress detectioncircuitry, the second semiconductor substrate having opposing third andfourth attachment areas; coupling the first attachment plate to thethird attachment area; and coupling a second attachment plate to thefourth attachment area, the second tensile stress detection circuitrybeing configured to detect a tensile stress imparted on the first andsecond attachment plates when attached to the object to be measured. 8.The method of claim 1, wherein the first and second attachment plateseach have a plurality of openings.
 9. The method of claim 1, furthercomprising forming an antenna trace to be carried by the firstattachment plate and to be coupled to the tensile stress detectioncircuitry.
 10. A method for making a tensile stress measurement deviceto be attached to an object to be measured, the method comprising:forming an integrated circuit (IC) comprising a semiconductor substrateand tensile stress detection circuitry on a detection portion of thesemiconductor substrate; the semiconductor substrate comprising a firstattachment plate portion extending outwardly from the detection portion,the first attachment plate being configured to be attached to the objectto be measured, and a second attachment plate portion extendingoutwardly from the detection portion, the second attachment plate beingconfigured to be attached to the object to be measured, the tensilestress detection circuitry to detect a tensile stress imparted on thefirst and second attachment plate portions when attached to the objectto be measured.
 11. The method of claim 10 further comprising couplingfirst and second elastic members extending between the first and secondattachment plate portions.
 12. The method of claim 10 further comprisingforming encapsulation material surrounding the IC.
 13. The method ofclaim 10, further comprising forming a second IC comprising a secondsemiconductor substrate with a second detection portion; the secondsemiconductor substrate comprising a third attachment plate portionextending outwardly from the second detection portion and to be attachedto the object to be measured, and a second attachment plate portionextending outwardly from the second detection portion and to be attachedto the object to be measured.
 14. The method of claim 10 wherein thefirst and second attachment plate portions each have a plurality ofopenings therein.
 15. The method of claim 10 further comprising formingan antenna trace to be carried by the first attachment plate portion andbeing coupled to the tensile stress detection circuitry.
 16. A method ofmaking a tensile stress measurement device, the method comprising:providing a first semiconductor substrate comprising a first tensilestress detection circuit, the first semiconductor substrate comprising afirst attachment area and a second attachment area; coupling a firstattachment plate to the first attachment area, the first attachmentplate comprising a metallic material and configured to be attached to anobject to be measured; coupling a second attachment plate to the secondattachment area, the second attachment plate comprising the metallicmaterial and configured to be attached to the object to be measured;attaching the first attachment plate to the second attachment plate witha first elastic element; and attaching the first attachment plate to thesecond attachment plate with a second elastic element, wherein the firstsemiconductor substrate is disposed between the first elastic elementand the second elastic element.
 17. The method of claim 16, wherein thefirst elastic element is outside a perimeter of the first semiconductorsubstrate and is parallel to a first edge of the first semiconductorsubstrate, and wherein the second elastic element is outside theperimeter of the first semiconductor substrate and is parallel to thefirst edge of the first semiconductor substrate.
 18. The method of claim16, wherein the first elastic element comprises an elastic materialdifferent from a material of the first attachment plate.
 19. The methodof claim 16, further comprising forming a plurality of electricallyconductive vias extending through the first semiconductor substrate atthe first and second attachment areas, the plurality of electricallyconductive vias being coupled to said first and second attachmentplates.
 20. The method of claim 16, further comprising forming anencapsulation material surrounding the first and second attachmentplates.
 21. The method of claim 16, wherein the first elastic elementand the second elastic element comprise an encapsulation material. 22.The method of claim 16, further comprising: providing a secondsemiconductor substrate comprising a second tensile stress detectioncircuit, the second semiconductor substrate comprising a thirdattachment area and a fourth attachment area; coupling the firstattachment plate to the third attachment area; and coupling the secondattachment plate to the fourth attachment area.
 23. The method of claim16, wherein the first elastic element and the second elastic elementcomprise a curved structural element.
 24. The method of claim 16,further comprising providing a circuit board in the first attachmentplate.
 25. The method of claim 16, further comprising: interlocking thefirst attachment plate with the first attachment area; and interlockingthe second attachment plate with the second attachment area.
 26. Amethod of making a tensile stress measurement device, the methodcomprising: providing a first semiconductor substrate comprising a firsttensile stress detection circuit, the first semiconductor substratecomprising a first attachment area and a second attachment area;surrounding the first attachment area with a first attachment plate, thefirst attachment plate comprising an encapsulant material and configuredto be attached to an object to be measured; and surrounding the secondattachment area with a second attachment plate, the second attachmentplate comprising the encapsulant material and configured to be attachedto the object to be measured, the first attachment plate and the secondattachment plate being separate plates attached through the firstsemiconductor substrate.
 27. The method of claim 26, further comprising:providing a second semiconductor substrate comprising a second tensilestress detection circuit, the second semiconductor substrate comprisinga third attachment area and a fourth attachment area, wherein the firstattachment plate surrounds the third attachment area, and wherein thesecond attachment plate surrounds the fourth attachment area.
 28. Themethod of claim 27, further comprising: forming an antenna trace betweenthe first semiconductor substrate and the second semiconductorsubstrate.
 29. The method of claim 26, further comprising: forming afirst dummy substrate over the first semiconductor substrate; andforming a second dummy substrate under the first semiconductorsubstrate, wherein the first semiconductor substrate is disposed betweenthe first dummy substrate and the second dummy substrate.
 30. The methodof claim 29, wherein a top surface of the first attachment area isattached to the first attachment plate through the first dummy substrateand wherein a bottom surface of the first attachment area is attached tothe first attachment plate through the second dummy substrate.
 31. Themethod of claim 29, further comprising: forming a first recess in thefirst dummy substrate, the first recess formed directly over a topsurface of the first attachment area, wherein the encapsulation materialof the first attachment plate fills the first recess.
 32. The method ofclaim 31, further comprising: forming a second recess in the first dummysubstrate, the second recess formed directly under a bottom surface ofthe first attachment area, wherein the encapsulation material of thefirst attachment plate fills the second recess.